JPH0588544B2 - - Google Patents

Info

Publication number
JPH0588544B2
JPH0588544B2 JP61247531A JP24753186A JPH0588544B2 JP H0588544 B2 JPH0588544 B2 JP H0588544B2 JP 61247531 A JP61247531 A JP 61247531A JP 24753186 A JP24753186 A JP 24753186A JP H0588544 B2 JPH0588544 B2 JP H0588544B2
Authority
JP
Japan
Prior art keywords
gate electrode
polycrystalline silicon
recrystallized
island
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61247531A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63102265A (ja
Inventor
Shigenobu Akyama
Genichi Yamazaki
Yasuaki Terui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP61247531A priority Critical patent/JPS63102265A/ja
Publication of JPS63102265A publication Critical patent/JPS63102265A/ja
Publication of JPH0588544B2 publication Critical patent/JPH0588544B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Recrystallisation Techniques (AREA)
JP61247531A 1986-10-20 1986-10-20 半導体装置の製造方法 Granted JPS63102265A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61247531A JPS63102265A (ja) 1986-10-20 1986-10-20 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61247531A JPS63102265A (ja) 1986-10-20 1986-10-20 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS63102265A JPS63102265A (ja) 1988-05-07
JPH0588544B2 true JPH0588544B2 (en]) 1993-12-22

Family

ID=17164884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61247531A Granted JPS63102265A (ja) 1986-10-20 1986-10-20 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS63102265A (en])

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5485019A (en) * 1992-02-05 1996-01-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6700133B1 (en) 1994-03-11 2004-03-02 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
JP3469337B2 (ja) * 1994-12-16 2003-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5817548A (en) * 1995-11-10 1998-10-06 Sony Corporation Method for fabricating thin film transistor device
JP4084039B2 (ja) * 2001-11-19 2008-04-30 株式会社 液晶先端技術開発センター 薄膜半導体装置及びその製造方法
CN100559073C (zh) * 2005-04-08 2009-11-11 东芝照明技术株式会社 灯
JP4849305B2 (ja) * 2005-04-08 2012-01-11 東芝ライテック株式会社 電球型ランプ
US7758223B2 (en) 2005-04-08 2010-07-20 Toshiba Lighting & Technology Corporation Lamp having outer shell to radiate heat of light source
JP4569683B2 (ja) 2007-10-16 2010-10-27 東芝ライテック株式会社 発光素子ランプ及び照明器具
JP5353216B2 (ja) 2008-01-07 2013-11-27 東芝ライテック株式会社 Ｌｅｄ電球及び照明器具
JP5601512B2 (ja) 2009-09-14 2014-10-08 東芝ライテック株式会社 発光装置および照明装置
CN119654696A (zh) * 2022-08-01 2025-03-18 三井化学株式会社 基板层叠体的制造方法及半导体装置

Also Published As

Publication number Publication date
JPS63102265A (ja) 1988-05-07

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term